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Report No.

Phosphorus and boron codoping of silicon nanocrystals by ion implantation; Photoluminescence properties

Nakamura, Toshihiro*; Adachi, Sadao*; Fujii, Minoru*; Miura, Kenta*; Yamamoto, Shunya

Silicon nanocrystals (Si-nc's) such as nanometer-sized Si dots embedded in a SiO$$_{2}$$ matrix and porous Si have been intensively investigated because of their interesting photoluminescence (PL) properties. Si-nc's exhibit strong and visible emission at room temperature. Because of their compatibility with Si-based technology, light-emitting Si-nc's are an attractive candidate for materials used in various optoelectronic device applications. In this study, the PL properties of n- and p-type dopants phosphorus (P) and boron (B) co-doped Si-nc's prepared by the ion implantation were studied. For (P, B) co-doped Si-nc's, the donor-acceptor (D-A)-pair recombination emission was clearly observed on the long-wavelength side of the intrinsic Si-nc emission. The D-A-pair recombination energy is found to be smaller than the band-gap energy of bulk Si and is strongly dependent on the number of P and B impurities doped in a Si-nc's.



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Category:Materials Science, Multidisciplinary



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