Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments

Abderrahmane, A.*; Koide, Shota*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*; Okada, Hiroshi*

Recent industrial trends indicate increasing demand for Hall effect sensors for monitoring magnetic fields under extreme conditions such as high temperatures and under harmful radiation conditions. In this study, robust and high sensitivity Hall effect sensors using AlGaN/GaN heterostructures with a two-dimensional electron gas at the heterointerface were fabricated, and their magnetic properties were investigated. The AlGaN/GaN 2DEG Hall sensors were stable to at least 400 C and even after irradiation of 380 keV protons at the fluence of 1 10 /cm. The results showed that the AlGaN/GaN 2DEG Hall sensors had superior radiation tolerance to AlGaAs/GaAs and AlInSb/InAsSb/AlInSb magnetic sensors.