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Report No.

Control of electronic and structural properties of epitaxial graphene on 3C-SiC/Si and its device applications

Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Yoshigoe, Akitaka ; Teraoka, Yuden; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Suemitsu, Maki*

We have developed epitaxy of graphene on Si (GOS) and device operation of GOS-based field-effect transistor (GOS-FET). In this paper, we will demonstrate that the stacking, the interface structure, and the electronic properties of GOS can be controlled by tuning surface termination and symmetry of 3C-SiC(111)/Si, with a proper choice of Si substrate and SiC growth conditions. On the Si-terminated 3C-SiC(111)/Si(111) surface GOS is Bernal-stacked with a band splitting, while on the C-terminated 3C-SiC(111)/Si(110) surface GOS is turbostratically stacked without a band splitting. This novel epitaxy techniques enable us to precisely control electronic properties of GOS for the forthcoming devices. Furthermore, it is shown that the macroscopic uniformity of the GOS within a sizable area makes it possible to fabricate a topgate GOS-FET using Si device technologies.



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