X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth

単一ナノワイヤのMBE成長中その場測定のためのマイクロ線回析

Hu, W.; 高橋 正光; 神津 美和*; 仲田 侑加*

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

A ternary Fresnel zone plate (FZP) has been fabricated and installed at the beamline 11XU of SPring-8, in the aim of in situ studies on the growth of semiconductor nanostructures using an X-ray diffractometer integrated with a molecular-beam epitaxial (MBE) chamber. The FZP is designed for an X-ray energy of 9.5 keV with peak efficiency of 48% for the 1st-order diffraction. The full width at half maximum of the focused beam profile is around 1 micrometer in both horizontal and vertical directions measured by the dark-field knife-edge scan of a gold wire which was 0.3 mm in diameter. Using this FZP, we will be able to perform in situ study of the growth mechanism of nanowire (NW) in atomic scale and carry out in situ X-ray diffraction (XRD) studies of single NW during MBE growth with a micro-beam. In this work, the performance test of this focusing system is presented and preliminary applications to monitoring the growth of single NW by in situ XRD were also carried out.