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Fabrication of highly-oriented silicide film on Si substrate treated by low-energy ion beam

低エネルギーイオンビームで処理されたSi基板への高配向性シリサイド薄膜の作製

濱本 悟*; 山口 憲司; 北條 喜一

Hamamoto, Satoshi*; Yamaguchi, Kenji; Hojo, Kiichi

Authors have shown that thin, uniform and highly-oriented $$beta$$-FeSi$$_2$$ films can be fabricated on Si(100) substrates when they are sputter-cleaned with low-energy ions. In the present study, dependence of the crystalline properties of $$beta$$-FeSi$$_2$$ films on the irradiated fluence of sputter etching (SE) was investigated to discuss whether it is possible to obtain high crystalline $$beta$$-FeSi$$_2$$ thin film with very low defect concentration. The $$beta$$-FeSi$$_2$$ thin film was fabricated on Si(100) substrate which was irradiated with 3 keV Ne$$^+$$ to an ion fluence of 3.7$$times$$10$$^{19}$$ m$$^{-2}$$, which is 1/10 of the fluence typically employed by the authors. The results revealed that the film deposited at 973 K was essentially polycrystalline, whereas the films deposited at 923 K was highly-oriented to $$beta$$(100) surfaces. This fact indicates that fabrication of high crystalline $$beta$$-FeSi$$_2$$ film is also possible under low fluence SE conditions.

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