Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 C for 60 min. Circular electrodes with 180 diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.