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Observation of graphene-on-diamond formation studied by real-time photoelectron spectroscopy

Ogawa, Shuichi*; Yamada, Takatoshi*; Ishizuka, Shinji*; Watanabe, Daiki*; Yoshigoe, Akitaka ; Hasegawa, Masataka*; Teraoka, Yuden; Takakuwa, Yuji*

Graphene-on-insulator structures are required for fabrication of the graphene transistor. Diamond has been attracted as the substrate for graphene growth because it has a larger band gap and break down voltage compared with SiC. The detail of graphitization on a diamond surface has not been clarified yet because the nondestructive evaluation for graphene-on-diamond (GOD) structure was hard. In this study, we have developed an evaluation method of GOD based on the photoemission spectroscopy using synchrotron radiation focusing the shift of photoelectron spectra due to band bending. We can clearly determine the graphitization temperature on the diamond C(111) surface as approximately 1120 K, which is lower than that on an SiC substrate. It is also confirmed from C 1s photoelectron spectra, there is the buffer layer at the interface between the grapheme layer and the diamond substrate.

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