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Vacuum annealing formation of graphene on diamond C(111) surfaces studied by real-time photoelectron spectroscopy

Ogawa, Shuichi*; Yamada, Takatoshi*; Ishizuka, Shinji*; Yoshigoe, Akitaka ; Hasegawa, Masataka*; Teraoka, Yuden; Takakuwa, Yuji*

To clarify the graphene formation process on a diamond C(111) surface, changes in the chemical bonding states by annealing in vacuum were investigated by photoelectron spectroscopy using synchrotron radiation. It is difficult to study the formation of sp$$_{2}$$-bonded carbon atoms on a diamond C(111) surface because the peak of the sp$$_{2}$$ component overlaps the peak of the surface sp$$_{3}$$ component as a result of the 2$$times$$1 reconstruction. Therefore, we focused on the shift in the C 1s photoelectron spectra and energy loss spectra caused by band bending depending on the temperature. As a result, we found that graphitization on the diamond C(111) surface began at approximately 1120 K, which was lower than that for an SiC substrate. The photoelectron spectra indicated that a buffer layer composed of sp$$_{2}$$-bonded carbon atoms existed at the interface between the graphene and diamond C(111) surface.

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Category:Physics, Applied

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