Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; 藤川 誠司*; 神津 美和; 高橋 正光
Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; Fujikawa, Seiji*; Kozu, Miwa; Takahashi, Masamitsu
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a 
pattern is observed which changes to the 
pattern at high temperature. In contrast to the GaSb(111)A surface the observed structure is not stabilized by configurational entropy.
使用言語 |
: | English |
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巻 |
: | 606 |
号 |
: | 17-18 |
ページ数 |
: | p.1458 - 1461 |
発行年月 |
: | 2012/09 |
キーワード |
: | no keyword |
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論文解説記事 |
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Access |
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- Accesses |
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パーセンタイル：5.01 分野：Chemistry, Physical |
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