Thermal stability of AlN layer formed by translational kinetic energy induced N adsorption on Al(111) surface

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka ; Komeda, Tadahiro*

The AlN thin film has been focused as a multi-functional material. A safety, cheap and energy-saving process is expected for the AlN thin film formation. We found the direct nitridation of Al(111) surface at 473 K by using supersonic N molecular beams (SSNMB). The uptake of N atoms was observed by photoemission spectroscopy with high brilliance and high energy-resolution synchrotron radiation (SR-XPS). The diffusion of N atoms may be a key process of the direct nitridation. The Al(111) nitridation was also observed recently in a temperature region from 300 K to 623 K. Remarkable temperature dependence has been shown in uptake curves. Thermal stability of the AlN layer, formed in a temperature region below 623 K, has been also investigated in a temperature region up to 773 K using SR-XPS. In this conference, we discuss chemical reaction mechanisms on the direct nitridation of Al(111) surface by SSNMB.