Radiation response of silicon carbide diodes and transistors

Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Arai, Manabu*; Tanaka, Yasunori*

SiC is regarded as a promising candidate for electronic devices used in harsh radiation environments because of its high radiation tolerance. Radiation effects on SiC devices are reviewed. Firstly, the Total Ionizing Dose (TID) effect in Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) is introduced. Then, the radiation hardness of SiC based transistors such as MOSFETs, Metal-Semiconductor (MES) FETs, Static Induction Transistors (SITs) is discussed from the point of view of -ray irradiation effects. Transient current induced in SiC pn diodes by heavy ions incidence, which is important information on the single event effects (SEEs), is also expressed.