Creation of nitrogen-vacancy centers in diamonds by nitrogen ion implantation

Oshima, Takeshi; Yamamoto, Takashi; Onoda, Shinobu; Abe, Hiroshi; Sato, Shinichiro; Jahnke, K.*; Heller, P.*; Gerstmayr, A.*; Hussler, A.*; Naydenov, B.*; Jelezko, F.*; Dolde, F.*; Fedder, H.*; Honert, J.*; Wrachtrup, J.*; Teraji, Tokuyuki*; Taniguchi, Takashi*; Watanabe, Kenji*; Koizumi, Satoshi*; Markham, M. L.*; Twitchen, D. J.*; Miyanari, Masashi*; Umeda, Takahide*; Isoya, Junichi*

Negatively charged nitrogen-vacancy (NV) centers were created in high quality IIa diamonds by nitrogen (N) implantation. To identify implanted N atoms and their incident position, micro ion beams of N (natural abundance 0.37%) were applied. Since the reduction of C affects an increase in T, N implantation into a CVD diamond with high purity of C (99.99%) was carried out. As a result, the value of T for both NV and NV centers (NV centers are created from N atoms originally existing in the diamond and vacancy introduced by implantation after annealing) was obtained to be about 2 ms. By optically detected magnetic resonance (ODMR) measurements, the creation yield of both NV and NV was estimated.