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Report No.
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Dopant activation by solid phase epitaxy in silicon and germanium

Johnson, B. C.; Oshima, Takeshi; McCallum, J. C.*

Solid phase epitaxy (SPE) is an important process used for the formation of shallow junctions on a low thermal budget. On annealing, atoms reorder at the crystal-amorphous (c-a) interface via a bond breaking mechanism, possibly mediated by dangling bonds. When the c-a interface passes a dopant, it is incorporated onto an electrically active lattice site, shifts the Fermi level and enhances the SPE velocity. The generalized Fermi level shifting (GFLS) model describes this process with two fitting parameters: the energy level, E, and degeneracy, g, of the SPE defect. High dopant concentrations induce a uniaxial strain in the plane of the c-a interface and is also expected to effect the SPE rate. In this study, we successfully incorporate this into the GFLS model. SPE data for a broad range of dopant concentrations and species in both silicon and germanium are investigated. Although the dopant concentrations are similar, the SPE of Ge in Sb rates are noticeably lower. Uniaxial compressive stress arising from the large Sb atoms causes this discrepancy.

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