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Report No.
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Defect engineering in fabrication of NV centers by nitrogen ion implantation

Yamamoto, Takashi; Onoda, Shinobu; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Taniguchi, Takashi*; Watanabe, Kenji*; Koizumi, Satoshi*; Umeda, Takahide*; Jelezko, F.*; Naydenov, B.*; Gerstmayr, A.*; H$"a$ussler, A.*; Heller, P.*; Jahnke, K.*; Wrachtrup, J.*; Dolde, F.*; Fedder, H.*; Honert, J.*; Twitchen, D.*; Markham, M.*

We have measured optically-detected magnetic resonance (ODMR) of single spin of NV center in a high purity $$^{12}$$C enriched CVD diamond created by $$^{15}$$N ion implantation. Detailed ODMR measurements of individual NV centers revealed that both $$^{14}$$NV and $$^{15}$$NV were created by the $$^{15}$$N implantation with a ratio of [$$^{14}$$NV]/[$$^{15}$$NV] $$sim$$ 1 and a high conversion yield of 70-100% for [$$^{14}$$NV+$$^{15}$$NV]. The spin coherence time of $$T_2$$ was measured to be 2 ms at room temperature, which is the longest ever recorded in implanted samples. This result is expected to have a significant impact on realizing NV based applications.

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