Heavy-ion induced anomalous charge collection from 4H-SiC Schottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Hirao, Toshio*; Oshima, Takeshi

Heavy ion induced anomalous charge collection was observed from 4H-SiC Schottky barrier diodes. It is suggested that the incident ion range with suspect to the thickness of the epi-layer of the SBD in key to understanding these observation and the understanding mechanism.

Language	:	English
Journal	:	IEEE Transactions on Nuclear Science
Volume	:	60
Number	:	4
Pages	:	p.2647 - 2650
Publication Year/Month	:	2013/08
Meeting title	:	13th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2012)
Held date	:	2012/09
Location (city)	:	Biarritz
Location (country)	:	France
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1109/TNS.2013.2243469
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	電力中央研究所

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Registration No. : BB20121362
JAEA Abstracts No. : 41001075
Paper Submission No. : 13074

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