Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon

水素化アモルファスシリコンのイオン照射誘起半導体特性変化

佐藤 真一郎; 大島 武

Sato, Shinichiro; Oshima, Takeshi

Variations of semiconductor properties of undoped, phosphorous doped, and boron doped hydrogenated amorphous silicon (a-Si:H) thin films due to proton and Si ion irradiation were studied. Electric conductivity, photoconductivity (increase in conductivity due to light illumination), and Seebeck coefficient of ion-irradiated a-Si:H were investigated in detail, and their mechanisms were discussed. The electric conductivity of the undoped a-Si:H irradiated with 100 keV protons had a peak at the fluence of 5.010 cm and the Seebeck effect could be measured only in the fluence regime around the conductivity peak. This indicates that donor-centers are generated in this fluence regime.