Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon

Sato, Shinichiro; Oshima, Takeshi

Variations of semiconductor properties of undoped, phosphorous doped, and boron doped hydrogenated amorphous silicon (a-Si:H) thin films due to proton and Si ion irradiation were studied. Electric conductivity, photoconductivity (increase in conductivity due to light illumination), and Seebeck coefficient of ion-irradiated a-Si:H were investigated in detail, and their mechanisms were discussed. The electric conductivity of the undoped a-Si:H irradiated with 100 keV protons had a peak at the fluence of 5.010 $^{11}$ cm $^{-2}$ and the Seebeck effect could be measured only in the fluence regime around the conductivity peak. This indicates that donor-centers are generated in this fluence regime.

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	314
Number	:
Pages	:	p.153 - 157
Publication Year/Month	:	2013/11
Meeting title	:	8th International Symposium on Swift Heavy Ions in Matter (SHIM 2012)
Held date	:	2012/10
Location (city)	:	Kyoto
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.nimb.2013.05.042
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : BB20121365
JAEA Abstracts No. : 42000056
Paper Submission No. : 13569

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