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Report No.
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Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon

Sato, Shinichiro; Oshima, Takeshi

Variations of semiconductor properties of undoped, phosphorous doped, and boron doped hydrogenated amorphous silicon (a-Si:H) thin films due to proton and Si ion irradiation were studied. Electric conductivity, photoconductivity (increase in conductivity due to light illumination), and Seebeck coefficient of ion-irradiated a-Si:H were investigated in detail, and their mechanisms were discussed. The electric conductivity of the undoped a-Si:H irradiated with 100 keV protons had a peak at the fluence of 5.0$$times$$10$$^{11}$$ cm$$^{-2}$$ and the Seebeck effect could be measured only in the fluence regime around the conductivity peak. This indicates that donor-centers are generated in this fluence regime.

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Category:Instruments & Instrumentation

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