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Report No.
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Experimental study on radiation tolerance of SOI-PLLs

Hoshino, Eijiro*; Kobayashi, Daisuke*; Makino, Takahiro; Oshima, Takeshi; Hirose, Kazuyuki*

Single event effects on phase locked loops (PLLs) are experimentally investigated. Test chips of the PLLs are fabricated in a 0.2-$$mu$$m fully-depleted silicon-on-insulator technology. The PLL architecture is designed in conjunction with hardening techniques such as the triple modular redundancy and a stacked transistor design approach. A heavy-ion beam test confirms that the hardened PLL exhibits higher radiation tolerance than non-hardened one for 7.5-MeV Ne irradiation: The accelerated ions have the linear energy transfer of 7.3 MeV/cm$$^2$$/mg in Si.

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