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Direct measurement of surface stress during Bi-mediated Ge growth on Si

Asaoka, Hidehito  ; Yamazaki, Tatsuya*; Yamaguchi, Kenji; Shamoto, Shinichi  ; Filimonov, S.*; Suemitsu, Maki*

We have focused on stress measurements during Bi termination of Si(111) and Ge growth on this Bi-mediated Si(111). In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. We find the Bi-terminated Si(111) $$sqrt{3}$$$$times$$$$sqrt{3}$$-$$beta$$ surface releases 1.8 N/m (=J/m$$^{2}$$), or (1.4 eV/(1$$times$$1 unit cell)), of the surface energy from the strong tensile Si(111) 7$$times$$7 reconstruction. Subsequent Ge deposition on the Bi-terminated Si surface develops a compressive stress, which oscillates with a period corresponding to the growth of a single bilayer. The real-time stress measurement provides a direct evidence for this oscillatory stress relaxation in the layer-by-layer growth.

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Category:Chemistry, Physical

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