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de Haas-van Alphen effect and Fermi surface properties in V$$_{5}$$Si$$_{3}$$

Tsutsumi, Hiroki*; Sakaguchi, Junya*; Miura, Yasunao*; Matsuda, Tatsuma; Haga, Yoshinori   ; Takeuchi, Tetsuya*; Harima, Hisatomo*; Settai, Rikio*; Onuki, Yoshichika

We succeeded in growing high-quality single crystals of V$$_{5}$$Si$$_{3}$$ with a high melting point of 2010 $$^{circ}$$C, and carried out the electrical resistivity, specific heat, magnetic susceptibility, and the de Haas-van Alphen measurements to clarify the electronic properties. The Fermi surface is small in volume and is well explained by the result of energy band calculations. The cyclotron mass is in the range from 5.3 to 0.2 $$m_0$$ ($$m_0$$: rest mass of an electron), consistent with the electronic specific heat coefficient $$gamma$$ = 9.7 mJ/(K$$^{2}$$$$cdot$$mol).

Language

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English

Journal

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Journal of the Physical Society of Japan

Volume

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81

Number

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Suppl.B

Pages

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p.SB027_1 - SB027_4

Publication Year/Month

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2012/12

Meeting title

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International Workshop on Heavy Fermions (TOKIMEKI 2011)

Held date

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2011/11

Location (city)

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Osaka

Location (country)

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Japan

Patent information

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PDF

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Paper URL

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https://doi.org/10.1143/JPSJS.81SB.SB027

DOI for research data

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Keywords

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no keyword

Research Facility

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Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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Accesses

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- Accesses

InCites™

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Percentile:0

Category:Physics, Multidisciplinary

Altmetrics

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