Refine your search�ソスF     
Report No.
 - 

In situ X-ray diffraction study of GaAs growth on Si

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*

Epitaxial growth of III-V semiconductors on silicon substrates is a longstanding issue in semiconductor technology. In the present work, we have employed in situ synchrotron X-ray diffraction to investigate the Volmer-Weber growth of GaAs/Si. From the three-dimensional reciprocal space mappings, structural information, such as strains, crystalline domain size and defects, was obtained during growth. The time evolution of the island size was compared with the prediction from the general nucleation theory. From the power-law exponents, it was concluded that growth processes of GaAs on Si(001) and Si(111) are limited by interface transfer and surface diffusion, respectively.

Accesses

:

- Accesses

InCites™

:

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.