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Suppression of vacancy aggregation by silicon-doping in low-temperature-grown Ga$$_{1-x}$$Cr$$_{x}$$N

低温で成長したGa$$_{1-x}$$Cr$$_{x}$$N結晶でのシリコンドーピングによる空孔型欠陥の凝集抑制

薮内 敦*; 前川 雅樹; 河裾 厚男; Zhou, Y.-K.*; 長谷川 繁彦*; 朝日 一*

Yabuuchi, Atsushi*; Maekawa, Masaki; Kawasuso, Atsuo; Zhou, Y.-K.*; Hasegawa, Shigehiko*; Asahi, Hajime*

Effect of Si doping on low-temperature grown GaCrN films has been investigated by positron annihilation spectroscopy. In undoped GaCrN films grown at 540 $$^{circ}$$C, vacancy clusters with sizes of V$$_6$$-V$$_{12}$$ were found to be responsible for positron trapping. Such vacancy clusters were considerably suppressed in Si-doped GaCrN films grown at 540 $$^{circ}$$C, although divacancies (V$$_{Ga}$$V$$_N$$) still survived. The Si-doping may be one possible way to suppress vacancy aggregation during low temperature crystal growth, and the further methods to remove divacancies are required.

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パーセンタイル:4.66

分野:Physics, Applied

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