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Shallow donor level associated with hydrogen impurities in undoped BaTiO$$_3$$

Ito, Takashi   ; Higemoto, Wataru  ; Matsuda, Tatsuma*; Koda, Akihiro*; Shimomura, Koichiro*

The influence of hydrogen impurities on electronic properties of undoped BaTiO$$_3$$ was studied from a microscopic point of view using the muon spin rotation and relaxation technique. Electron localization around an implanted positive muon, by analogy an hydrogen impurity, was observed below $$sim$$80 K. The effective electron binding energy was estimated to be $$sim10^{-2}$$ eV, indicating that the hydrogen-induced defect forms a shallow donor level. At room temperature, the weakly bound electron is excited into a conduction band and behaves as a free carrier, which causes insulation degradation undesirable for capacitor application.

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Category:Physics, Applied

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