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New micromachining technique for unworkable sapphire by highly coalesced ion implantation and eximer laser irradiation

Ishiyama, Shintaro; Oba, Hironori; Yamamoto, Shunya; Shobu, Takahisa 

New micromachining technique of unworkable sapphire was demonstrated by highly coalesced ion implantation and eximer laser irradiation methods. After proton implantation by 0.3 MeV H$$_{2}$$$$^{+}$$ up to 1$$times$$10$$^{17}$$/cm$$^{2}$$ into sapphire, damaged region was formed beneath 1$$mu$$m depth from the surface of implanted sapphire and blistering was observed by 0.3$$sim$$3 MeV H$$_{2}$$$$^{+}$$ over 1$$times$$10$$^{17}$$/cm$$^{2}$$. Ion implanted sapphire behaves peculiar wavelength absorption at 200 nm and ion implanted sapphire by 0.3 MeV H$$_{2}$$$$^{+}$$ up to 1$$times$$10$$^{17}$$/cm$$^{2}$$ was irradiated by ArF laser with 3.4 J/cm$$^{2}$$$$times$$1 shot and micro trench shape with 1$$mu$$m depth and 50$$sim$$80 $$mu$$m width was observed on the surface of ion implanted sapphire. These results mean that micromachining of sapphire on the order of $$mu$$m width with arbitrarily depth can be possible by highly coalesced ion implantation and laser irradiation techniques.

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Category:Engineering, Chemical

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