New micromachining technique for unworkable sapphire by highly coalesced ion implantation and eximer laser irradiation

Ishiyama, Shintaro; Oba, Hironori  ; Yamamoto, Shunya; Shobu, Takahisa  

New micromachining technique of unworkable sapphire was demonstrated by highly coalesced ion implantation and eximer laser irradiation methods. After proton implantation by 0.3 MeV H up to 110/cm into sapphire, damaged region was formed beneath 1m depth from the surface of implanted sapphire and blistering was observed by 0.33 MeV H over 110/cm. Ion implanted sapphire behaves peculiar wavelength absorption at 200 nm and ion implanted sapphire by 0.3 MeV H up to 110/cm was irradiated by ArF laser with 3.4 J/cm1 shot and micro trench shape with 1m depth and 5080 m width was observed on the surface of ion implanted sapphire. These results mean that micromachining of sapphire on the order of m width with arbitrarily depth can be possible by highly coalesced ion implantation and laser irradiation techniques.