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X-ray Raman scattering study on the valence transition in EuPd$$_2$$Si$$_2$$

Inami, Toshiya; Ishii, Kenji; Jarrige, I.*; Yoshida, Masahiro*; Mitsuda, Akihiro*

X-ray absorption spectroscopy at the lanthanoid $$M$$- and $$N$$-edges is a versatile tool for investigating valency, spatial symmetry and hybridization of the $$4f$$ electrons. A disadvantage of this technique, however, is the very short penetration length of soft X-rays in solid materials. X-ray Raman scattering (XRS) is an alternative method to obtain absorption spectra. High energy incident X-rays transfer a part of their energy to various excitations and the obtained energy-loss spectrum corresponds to an absorption spectrum. Because of the high penetration depth of hard X-rays, this technique is truly bulk sensitive. Here we report on a feasibility study of XRS experiments applied to a mixed-valent f-electron system. The test sample was EuPd$$_2$$Si$$_2$$, which exhibits a sharp and large valence transition around 150 K. The obtained XRS spectra showed clear absorption features at the $$M$$- and $$N$$-edges. However, we did not detect any difference between the spectra at 10 K and 200 K.

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