Optimization of substrate pretreatment and deposition conditions for epitaxial growth of -FeSi film on Si(100)

Yamaguchi, Kenji; Hamamoto, Satoshi*; Hojo, Kiichi

Effect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of -FeSi films formed on Si substrate was investigated. The substrates were treated with Ne ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the epitaxial relationship of -FeSi (100) // Si (100) were defined. Complicated dependence of these experimental parameters on the film structure indicated that careful optimization of substrate treatment conditions and deposition parameters would enable to obtain -FeSi films with excellent crystalline properties.