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Germanide formation in metal/high-$$k$$/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Minoura, Yuya*; Tanaka, Ryohei*; Yoshigoe, Akitaka ; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

An understanding of the mechanisms responsible for formation or decomposition of GeO$$_{x}$$ interlayer and Ge diffusion into high-$$k$$ layer is important to develop advanced metal/high-$$k$$ gate stacks for Ge MOSFETs. In this work, we fabricated HfO$$_{2}$$/GeO$$_{x}$$/Ge gate stacks by ${it in situ}$ oxidation of thin metal Hf layers on Ge substrates. The effect of plasma oxidation on the change in the bonding states of Ge atoms in HfO$$_{2}$$/GeO$$_{x}$$/Ge gate stacks and the structural changes induced by metal electrode deposition and thermal annealing was systematically investigated by synchrotron radiation photoemission spectroscopy (SR-PES) and electrical characterization.



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