Electronic states in antiferromagnetic compound URhIn investigated by de Haas-van Alphen effect and high pressure resistivity measurements

ドハース・ファンアルフェン効果と高圧下電気抵抗測定による反強磁性体URhInの電子状態研究

松本 裕司; 芳賀 芳範   ; 立岩 尚之   ; 山本 悦嗣  ; 木村 憲彰*; 青木 晴善*; Fisk, Z.

Matsumoto, Yuji; Haga, Yoshinori; Tateiwa, Naoyuki; Yamamoto, Etsuji; Kimura, Noriaki*; Aoki, Haruyoshi*; Fisk, Z.

Single crystal samples of a new uranium compound URhIn with the well-known tetragonal HoCoGa-type structure have been grown by the indium flux method. Although this compound is isostructural to a Ga-analogue URhGa, the unit cell volume is significantly larger in URhIn. In contrast to non-magnetic behavior in the isostructural URhGa, URhIn has a magnetic ground state with a magnetic transition at 98 K, indicating a drastic difference in electronic states between these compounds.