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Electronic states in antiferromagnetic compound URhIn$$_5$$ investigated by de Haas-van Alphen effect and high pressure resistivity measurements

ドハース・ファンアルフェン効果と高圧下電気抵抗測定による反強磁性体URhIn$$_5$$の電子状態研究

松本 裕司; 芳賀 芳範 ; 立岩 尚之  ; 山本 悦嗣 ; 木村 憲彰*; 青木 晴善*; Fisk, Z.

Matsumoto, Yuji; Haga, Yoshinori; Tateiwa, Naoyuki; Yamamoto, Etsuji; Kimura, Noriaki*; Aoki, Haruyoshi*; Fisk, Z.

Single crystal samples of a new uranium compound URhIn$$_5$$ with the well-known tetragonal HoCoGa$$_5$$-type structure have been grown by the indium flux method. Although this compound is isostructural to a Ga-analogue URhGa$$_5$$, the unit cell volume is significantly larger in URhIn$$_5$$. In contrast to non-magnetic behavior in the isostructural URhGa$$_5$$, URhIn$$_5$$ has a magnetic ground state with a magnetic transition at 98 K, indicating a drastic difference in electronic states between these compounds.

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