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Report No.

Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography

Oyama, Tomoko; Oshima, Akihiro*; Washio, Masakazu*; Tagawa, Seiichi*

Potential extension of 13.5 nm extreme ultraviolet lithography (EUVL) to 6.x nm range has been discussed recently in academia and the semiconductor industry. We investigated the sensitivities of several resists using highly monochromatized soft X-rays from synchrotron radiation. Although the absorbed dose depends on the distance from the top surface of the resist, the required absorbed doses ($$D_0$$ or $$D_{50}$$, Gy) corresponding to the dose/sensitivities ($$E_0$$ or $$E_{50}$$, mJ cm$$^{-2}$$) were almost constant for each resist regardless of the exposure wavelength. This would be applicable in the EUV/soft X-ray region, where nearly the same chemical reactions are induced. The resist sensitivities for any exposure wavelength can be predicted easily by using the sensitivity that is measured at a certain wavelength, the resist's thickness, and the linear absorption coefficients that can be calculated using the chemical composition and density of a resist.



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