RBS study of disordering of FeMnSi/Ge(111) heteroepitaxial interfaces

乱れたFeMnSi/Ge(111)界面ヘテロエピタキシャル界面のRBS測定

野口 雄也*; 平田 智昭*; 川久保 雄基*; 鳴海 一雅; 境 誠司; 前田 佳均

Noguchi, Masaya*; Hirata, Tomoaki*; Kawakubo, Yuki*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito

We have investigated perfection of atomic rows on iron-based Heusler alloy films, FeMnSi, on Ge(111) planes by using ion channeling technique in order to find the dominant factors for the perfection. FeMnSi/Ge(111) (x=0.84, 0.72 and 0.36) interfaces have imperfection of atomic rows which may be controlled by both the lattice mismatch with the Ge substrate and the Mn-Si pairs due to the site disorder in the film with the Mn content x = 0.75. This is in contract with FeSi/Ge(111) and FeCoSi/Ge(111) which have a high quality of atomic rows at the heterointerface like that of perfect crystals. Analysis of axial channeling parameters employed in this study is very useful for quantitative evaluation of perfection of atomic rows at the heterointerface.