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Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

Abderrahmane, A.*; Koide, Shota*; Tahara, Tomoyuki*; Sato, Shinichiro; Oshima, Takeshi; Okada, Hiroshi*; Sandhu, A.*

We investigated the effect of high energy and high fluence proton irradiation on magnetoelectric properties of AlGaN/GaN micro-Hall sensors from 5.4 K to room temperature. The sensors show good resistance versus the irradiation translated by the stability of the sheet density therefore the stability of the absolute sensitivity of the sensor. However, the proton irradiation damaged the electrical properties of the sensor indicated by the dramatically decrease of the mobility at low temperature by rate of about 81% at 5.4 K. The existing of the 2DEG system either after irradiation with high energy was confirmed by investigation the magnetotransport measurements at low temperature and which show Shubnikov de Haas oscillations at high magnetic field. Damping of the Shubnikov de Haas oscillations and disappearance of Landau plateaus after irradiation were related to the degradation in the mobility causing by increasing the scattering at the interface.

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