Refine your search:     
Report No.

First-principles analysis of defect levels at the interface of oxide film of silicon carbide semiconductor devices

Miyashita, Atsumi; Yoshikawa, Masahito

no abstracts in English



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.