Mn
Si/Ge(111) heteroepitaxial interfacesMnSi/Ge(111)ヘテロエピタキシャル界面における乱れの研究野口 雄也*; 平田 智昭*; 川久保 雄基*; 鳴海 一雅; 境 誠司; 前田 佳均
Noguchi, Masaya*; Hirata, Tomoaki*; Kawakubo, Yuki*; Narumi, Kazumasa; Sakai, Seiji; Maeda, Yoshihito
We have investigated thermal disordering and instability of Fe
MnSi (FMS) (111)/Ge(111) heterointerfaces by Rutherford-backscattering spectrometry (RBS), and found pronounced degradation of axial orientation which appears as increase of the minimum yield of RBS when the FMS samples are annealed above 300
C. Analysis of interdiffusion at the heterointerface reveals that the disordering mainly comes from interdiffusion between Fe and Ge atoms. This situation is the same as that observed in off-stoichiometric Fe
Si, 
, Fe
Si, but far from that in stoichiometric FeSi.
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巻 |
: | 10 |
号 |
: | 12 |
ページ数 |
: | p.1732 - 1734 |
発行年月 |
: | 2013/12 |
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開催年月 |
: | 2013/07 |
開催都市 |
: | Tsukuba |
開催国 |
: | Japan |
キーワード |
: | no keyword |
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パーセンタイル：0.01 分野：Nanoscience & Nanotechnology |
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