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Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

Otomo, Manabu; Yamauchi, Yasushi*; Kuzubov, A. A.*; Eliseeva, N. S.*; Avramov, P.*; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Sakai, Seiji

Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this study, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN on Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3$$d$$ signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the $$pi$$-$$d$$ hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.

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Category:Physics, Applied

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