超音速N分子線により誘起されるAlN薄膜形成過程の表面温度依存性

Surface temperature dependence on AlN film formation processes induced by supersonic N molecular beam

寺岡 有殿; 神農 宗徹*; 高岡 毅*; Harries, J.; 岡田 隆太; 岩井 優太郎*; 吉越 章隆 ; 米田 忠弘*

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.