Analysis of oligothiophene thin films grown on semiconductor surfaces

Kodama, Hiraku*; Hiraga, Kenta*; Ono, Shinya*; Sekiguchi, Tetsuhiro ; Baba, Yuji ; Tanaka, Masatoshi*

The electronic property of organic semiconductor depends strongly on the interfacial structure between organic molecule and the substrate. We have investigated the structure of a-sexithiophene (-6T) molecule thin films grown on semiconductor surfaces including SiO $_{2}$ , GaSe, and WSe $_{2}$ , using NEXAFS spectroscopy. Using polarized X-ray, orientation structure of a-6T molecules can be precisely determined. It was found that the orientation structure depend on the substrates. -6T on GaSe is oriented with long molecular axis being flat-lying parallel to the surface. On the hand, -6T on SiO $_{2}$ is up-right standing. The tendency of orientation direction change was interpreted in terms of the interfacial interaction between -6T molecule and the substrates.

Language	:	Japanese
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Meeting title	:	日本物理学会第69回年次大会
Held date	:	2014/03
Location (city)	:	平塚
Location (country)	:	日本
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Cooperating Institute	:	横浜国立大学

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Registration No. : BB20140066
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