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Radiation resistance of super-straight type amorphous silicon germanium alloy solar cells

Sato, Shinichiro; Meguro, Tomomi*; Suezaki, Takashi*; Yamamoto, Kenji*; Oshima, Takeshi

Performance degradation of super-straight type amorphous silicon germanium alloy (a-SiGe) solar cells due to proton irradiation are investigated using an in-situ current-voltage measurement system. The results show that a-Si solar cells have higher radiation resistance than a-SiGe solar cells. Also, the room temperature annealing effects immediately after irradiation are investigated and it is shown that the recovery of the short-circuit current is especially prominent in all the parameters. Based on the obtained results, we propose a radiation hardened design of amorphous silicon alloy multi-junction solar cells.

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