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Reaction kinetics of oxygen molecule at SiO$$_{2}$$/Si(111) interface monitored in real time by X-ray photoelectron spectroscopy

X線光電子分光によりリアルタイムで観察されたSiO$$_{2}$$/Si(111)界面での酸素分子の反応速度

Tang, J.*; 小川 修一*; 吉越 章隆 ; 西本 究*; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation kinetics at an SiO$$_{2}$$/Si(111) interface was monitored by O 1s and Si 2p photoelectron spectroscopy using synchrotron radiation to clarify the oxygen pressure dependence of oxidation rate. The initial oxygen uptake at the O$$_{2}$$ pressure of 4.6$$times$$10$$^{-5}$$ Pa and the substrate temperature of 500$$^{circ}$$C slowed down at about 0.4 nm, suggesting that the surface is covered with oxides. When the oxygen pressure was increased from 4.6$$times$$10$$^{-5}$$ Pa after saturation, the oxidation rate showed the increase depending on oxygen pressure difference. In addition to Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$, and Si$$^{4+}$$ components, Si$$_{alpha}$$ and Si$$_{beta}$$ components, which are associated with the interface strain, were examined carefully. To explain the observed correlation between the oxidation induced strain and the oxidation rate comprehensively, the vacancy and the emitted Si atoms from the interface are taken into account as oxygen adsorption sites.

使用言語

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English

掲載資料名

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巻

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号

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ページ数

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発行年月

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発表会議名

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16th International Conference on Thin Films (ICTF-16)

開催年月

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2014/10

開催都市

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Dubrovnik

開催国

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Croatia

キーワード

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no keyword

特許データ

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PDF

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論文URL

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研究データの公開先DOI

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使用施設

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SPring-8(大型放射光施設)

広報プレスリリース

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論文解説記事
(成果普及情報誌)

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受委託・共同研究相手機関

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東北大学

Access

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- Accesses

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