Soft error rate analysis based on the multiple sensitive volume model using PHITS code

Abe, Shinichiro   ; Sato, Tatsuhiko   

Neutron-induced soft error in a NMOSFET is analyzed based on the multiple sensitive volume (MSV) model using the PHITS code. The result is compared with those obtained by PHYSERD based on event-by-event TCAD simulation and by simple sensitive vollume (SSV) model using the PHITS code. The SER calculated by PHITS-MSV is in good agreement with the SER obtained by PHYSERD. From the comparisons of the collected charges between TCAD simulation and SV model calculations for each single event, it is found that the accuracy of the SER calculation based on the MSV model is improved by considering the spatial dependence of the charge collection efficiency.