Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

no abstracts in English

Language	:	Japanese
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Meeting title	:	2014年秋季第75回応用物理学会学術講演会
Held date	:	2014/09
Location (city)	:	札幌
Location (country)	:	日本
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Keywords	:	炭化ケイ素粒子検出器; アルファ線誘起電荷スペクトロスコピー(APQTS)
Research Facility	:	TIARA(イオン照射研究施設);1号加速器
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Article of JAEA R&D Review	:
Cooperating Institute	:	電力中央研究所; 群馬大学

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Registration No. : BB20140787
JAEA Abstracts No. :
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