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Report No.

Evaluation of the defect level in 4H-SiC schottky barrier diode by alpha particle induced charge transient spectroscopy

Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*

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