Theory of interfacial magnetic anisotropy due to the Rashba effect

Ieda, Junichi   

In recent years, attention has been focused on a specific spin state of ferromagnetic ultra-thin film made of a few atomic layers. Elucidation of the underlying mechanism of the perpendicular magnetic anisotropy (PMA) in the ferromagnetic ultra-thin films and its electric field control are crucial for future materials development. Although theoretical explanation has been attempted from various angles, the behavior of the PMA in high electric fields are not yet understood in a unified manner. Is classified into the following three models proposed so far: (Model 1) doping effect to the ferromagnetic ultra-thin film interface: the band filling is changed by doping of ferromagnetic ultra-thin interface leading to the change of the PMA. (Model 2) band splitting effect of ferromagnetic ultra-thin films: In the high electric field, the energy band of ferromagnetic ultra-thin is split leading to the change of the PMA. (Model 3) model Rashba effect in the interface of ferromagnetic ultra-thin films: PMA is expressed by Rashba effect of the interface to compete with exchange splitting of ferromagnetic material, PMA can change through the electric field dependence of the Rashba effect. In this talk, for the third model we have proposed, we will introduce the theory based on the Stoner model of ferromagnetism and the Rashba spin orbit interaction.