Enhancement of charge collection by single ion in gallium nitride (GaN) high electron mobility transistors

Onoda, Shinobu; Oshima, Takeshi; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*

no abstracts in English

Language	:	Japanese
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Meeting title	:	第9回高崎量子応用研究シンポジウム
Held date	:	2014/10
Location (city)	:	高崎
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	三菱電機

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Registration No. : BB20142454
JAEA Abstracts No. :
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