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Surface stress measurement of Si(111) 7$$times$$7 reconstruction by comparison with hydrogen-terminated 1$$times$$1 surface

水素終端1$$times$$1構造との比較によるSi(111)7$$times$$7再構成表面ストレスの実測

朝岡 秀人; 魚住 雄輝

Asaoka, Hidehito; Uozumi, Yuki

Siなど半導体最表面は、表面ダングリングボンドの数を減少させるように独自の再構成構造を示すことから、バルクとは異なる独自のストレスが存在すると考えられてきた。我々はSi(111)7$$times$$7再構成表面に水素終端処理を施すことによって1$$times$$1バルク構造を作製し、最表面構造の違いによるストレスの実測を試みた。その結果、これまで理論計算でのみ得られていたSi(111)7$$times$$7再構成構造に存在する引張応力を実測することに成功し、成長形態と密接な関係がある表面ストレスの評価を可能とした。

We have focused on measurements of the surface stress in Si(111) as a function of 7$$times$$7 reconstruction by comparison with the hydrogen (H)-terminated Si(111) 1$$times$$1 surface. In order to obtain information on both the surface stress and the surface reconstruction simultaneously, we have combined the surface-curvature and the reflection-high-energy-electron-diffraction instrumentations in an identical ultrahigh vacuum system. The stress evolution shows a decrease of tensile stress corresponding to the formation of H-termination at the beginning of the atomic H exposure of Si(111) 7$$times$$7 surface. After the above treatment, a complete transformation of the surface structure occurs from the reconstructed surface to the 1$$times$$1 one. As a result, we find the H-terminated Si(111) 1$$times$$1 surface releases 1.7 N/m (=J/m$$^{2}$$), or (1.4 eV/(1$$times$$1 unit cell)), of the surface energy from the strong tensile Si(111) 7$$times$$7 reconstruction.

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