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Report No.

Development of the device for electrical resistivity measurements for proton irradiation under cryogenic condition

Iwamoto, Yosuke  ; Yoshiie, Toshimasa*; Yoshida, Makoto*; Nakamoto, Tatsushi*; Sakamoto, Masaaki*; Kuriyama, Yasutoshi*; Uesugi, Tomonori*; Ishi, Yoshihiro*; Xu, Q.*; Yashima, Hiroshi*; Takahashi, Fumiaki ; Mori, Yoshiharu*; Ogitsu, Toru*

To validate the radiation damage calculation in the PHITS code for proton irradiation over 100 MeV, we have developed the device for electrical resistance measurement under cryogenic condition. A copper wire with 99.999% purity in a diameter of 250-$$mu$$m was set with a serpentine-shaped line on the AlN sheet which has high thermal conductivity and electric insulation. The sample was annealed for 1 h at 1,000$$^{circ}$$C before irradiation. After annealing, the sample was cooled with an oxygen-free high-conductivity copper plate by conduction cooling. The electrical resistivity changes in the sample were measured using the four-probe technique. As a result, the residual resistivity ratio of the sample was about 1,800 between room temperature and 11 K. After 125 MeV proton irradiation with 1.45$$times$$10$$^{14}$$(proton/cm$$^{2}$$) at 11 K, the total resistance increase was 1.53$$mu$$ $$Omega$$, while the resistivity of copper before irradiation was 29.41$$mu$$ $$Omega$$.



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