Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography

Takei, Satoshi*; Oshima, Akihiro*; Oyama, Tomoko; Ito, Kenta*; Sugahara, Kigen*; Kashiwakura, Miki*; Kozawa, Takahiro*; Tagawa, Seiichi*; Hanabata, Makoto*

The application of natural linear polysaccharide to green resists was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography. Because of the water solubility of natural polysaccharides, the water spin-coating and water-developable processes realize an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups was found to have acceptable properties such as spin-coat ability on 200 mm wafers, pillar patterns of 100-400 nm with a high EB sensitivity of 10 C/cm, etch selectivity with a silicon-based middle layer in CF plasma treatment, and high prediction sensitivity to EUV region.