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Report No.
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Coherent control of single spins in silicon carbide at room temperature

Widmann, M.*; Lee, S.-Y.*; Rendler, T.*; Son, N. T.*; Fedder, H.*; Paik, S.*; Yang, L.-P.*; Zhao, N.*; Yang, S.*; Booker, I.*; Denisenko, A.*; Jamali, M.*; Momenzadeh, S. A.*; Gerhardt, I.*; Oshima, Takeshi; Gali, A.*; Janz$'e$n, E.*; Wrachtrup, J.*

Single silicon vacancy (V$$_{Si}$$) in silicon carbide (SiC) was studied from the point of view of single photon source for quantum computing. The V$$_{Si}$$ centers were created in high purity semi-insulating hexagonal (4H)-SiC by 2 MeV electron irradiation with fluences up to 5$$times$$10$$^{15}$$ /cm$$^{2}$$. No subsequent annealing was carried out. A couple of solid immersion lens (SIL) with 20 $$mu$$m diameter were created on samples by ion milling using 40 keV Ga focused ion beam. A typical home-built confocal setup was used after optimizing for emission in the wavelength range around 900 nm. As a result, optically detected electron spin resonance (ODMR) for V$$_{Si}$$ was observed at room temperature (RT). Using ODMR, Rabi oscillations were also observed, and the Rabi frequency increased with increasing applied-magnetic field. In addition, spin relaxation time T$$_{1}$$ and T$$_{2}$$ were detected to be 500 $$mu$$s and 160 $$mu$$s, respectively.

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