Impact of improvement in event generator mode implemented in PHITS code for analysis of single event upset in semiconductor device

Abe, Shinichiro   ; Sato, Tatsuhiko   ; Ogawa, Tatsuhiko   

In this study, we have analyzed the impact of the new version of event generator mode (e-mode ver. 2) implemented in PHITS code on evaluations of neutron-induced single event upset (SEU) for semiconductor devices. Single event effect is one of the radiation effects on the semiconductor device. The data stored in the device are flipped by the noise charge created by radiation (so-called SEU), and temporary malfunction is happened in the microelectronic device (so-called soft error). Since neutrons have no charge, they create the noise charge via a nuclear reaction. Therefore the accuracy of the nuclear reaction model is important for validating SEU cross section by simulation. The improvement of e-mode ver. 2 has been validated by comparing the product cross sections of secondary ions with those stored in the JENDL-4.0. From the comparison of SEU cross sections by e-mode ver. 2 with those obtained by e-mode ver. 1 (existing version), it is found that the improvement of e-mode have an impact on the SEU analysis.