Single crystal growth and characterization of URuSi

Haga, Yoshinori ; Matsuda, Tatsuma*; Tateiwa, Naoyuki ; Yamamoto, Etsuji ; Onuki, Yoshichika; Fisk, Z.

We review recent progress in single crystal growth and study of electronic properties in URuSi. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.

Language	:	English
Journal	:	Philosophical Magazine
Volume	:	94
Number	:	32-33
Pages	:	p.3672 - 3680
Publication Year/Month	:	2014/11
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Paper URL	:	https://doi.org/10.1080/14786435.2014.974711
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Keywords	:	no keyword
Research Facility	:	第4研究棟
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:27.24 Category:Materials Science, Multidisciplinary
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Registration No. : AA20140598
JAEA Abstracts No. : 43000227
Paper Submission No. : 15346

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