Difference by the oxide fabrication process of the -ray irradiation effect on SiC-MOSFET

Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*

no abstracts in English

Language	:	Japanese
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Meeting title	:	2015年(平成27年)第62回応用物理学会春季学術講演会
Held date	:	2015/03
Location (city)	:	平塚
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
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Cooperating Institute	:	サンケン電気; 埼玉大学

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Registration No. : BB20142989
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