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Difference by the oxide fabrication process of the $$gamma$$-ray irradiation effect on SiC-MOSFET

Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*

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