In situ photoemission study of interface reaction in Al/Ti/n-GaN structures

Ito, Joyo*; Asahara, Ryohei*; Nozaki, Mikito*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka ; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*

no abstracts in English

Language	:	Japanese
Journal	:
Volume	:
Number	:
Pages	:
Publication Year/Month	:
Meeting title	:	2015年(平成27年)第62回応用物理学会春季学術講演会
Held date	:	2015/03
Location (city)	:	平塚
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	GaN; 放射光光電子分光; パワーデバイス
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : BB20143189
JAEA Abstracts No. :
Paper Submission No. :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.